| PART |
Description |
Maker |
| GT15M321 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| IRG4BC29K IRG4BC30K IRG4BC30 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
| IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15 |
55 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| NGTG50N60FWG |
Insulated Gate Bipolar Transistor (IGBT)
|
ON Semiconductor
|
| NGTG30N60FWG |
Insulated Gate Bipolar Transistor (IGBT)
|
ON Semiconductor
|
| NGTB30N60IHLWG |
Insulated Gate Bipolar Transistor (IGBT)
|
ON Semiconductor
|
| NGTB50N60FLWG |
Insulated Gate Bipolar Transistor (IGBT)
|
ON Semiconductor
|
| IRG4BC30KD-S IRG4BC30KD-STRR IRG4BC30KDS IRG4BC30K |
600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
| IRG4PC40UPBF |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
|
International Rectifier
|
| IRG4BC30S-SPBF |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
|
International Rectifier
|
| GT10.DA120U |
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
|
Vishay Siliconix
|
| GT60M303 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
Toshiba Semiconductor
|
